A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications.
Weijie WeiWeifeng LüYing HanCaiyun ZhangDengke ChenPublished in: Microelectron. J. (2024)
Keyphrases
- low power
- field effect transistors
- high speed
- steady state
- power consumption
- high density
- low cost
- cmos technology
- mathematical analysis
- schottky barrier
- single chip
- high power
- vlsi architecture
- vlsi circuits
- low power consumption
- logic circuits
- data center
- wireless transmission
- image sensor
- power saving
- mixed signal
- markov chain
- nm technology
- gate array
- data management
- signal processing
- power dissipation