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An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires.

Ya-Chi HuangMeng-Hsueh ChiangShui-Jinn WangSumeet Kumar Gupta
Published in: ICICDT (2018)
Keyphrases
  • low voltage
  • cmos technology
  • leakage current
  • power consumption
  • design considerations
  • cost effective
  • random access memory
  • multimedia
  • low cost
  • signal to noise ratio