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In0.52Al0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses.

Po-Shun WangYu-Ying HungTzu-Yuan FangChin-He KuoYuan-Hung HuangYan-Chieh ChangYi-Shan LeeJin-Wei Shi
Published in: OFC (2023)
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