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Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz.

Woojin ChoiVenkatesh BalasubramanianPeter M. AsbeckShadi A. Dayeh
Published in: DRC (2020)
Keyphrases
  • high speed
  • low power
  • integrated circuit
  • metal oxide
  • real time
  • neural network
  • multiresolution
  • circuit design
  • leakage current