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Alteration of Gate-Oxide Trap Capture/Emission Time Constants by Channel Hot-Carrier Effect in the Metal-Oxide-Semiconductor Field-Effect Transistor.
Xin Ju
Diing Shenp Ang
Published in:
IEEE Access (2020)
Keyphrases
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field effect transistors
steady state
high density
mathematical analysis
schottky barrier
metal oxide semiconductor
markov chain
computer vision
high resolution
high speed