Gate oxide breakdown characterization on 0.13mum CMOS technology.

D. Faure D. Bru C. Ali C. Giret K. Christensen

Published in: Microelectron. Reliab. (2003)

Keyphrases

leakage current
low voltage
cmos technology
low power
spl times
power consumption
parallel processing
design considerations
high speed
random access memory
low cost
case study
power dissipation
power management
image sensor
hardware and software
image analysis
pattern recognition
image processing