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Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs.

Sanjit Kumar SwainArka DuttaSarosij AdakSudhansu Kumar PatiChandan Kumar Sarkar
Published in: Microelectron. Reliab. (2016)
Keyphrases
  • field effect transistors
  • steady state
  • high density
  • multiple input
  • multi channel
  • wide range
  • mathematical analysis
  • communication channels
  • low voltage
  • neural network
  • channel coding
  • liquid crystal displays