Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications.
Daniele NazzariLukas WindMasiar SistaniDominik MayrKihye KimWalter M. WeberPublished in: CoRR (2024)
Keyphrases
- schottky barrier
- field effect transistors
- micron cmos
- high density
- memory usage
- memory requirements
- random access memory
- multi valued
- flip flops
- memory space
- classical logic
- automated reasoning
- limited memory
- computing power
- integrated circuit
- main memory
- logic programming
- real time
- random access
- probability theory
- computational power
- circuit design
- associative memory
- modal logic
- neural network