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Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack.

Jeffrey A. SmithHideki TakeuchiRobert StephensonY. A. ChenMarek HythaRobert J. MearsSuman Datta
Published in: DRC (2018)
Keyphrases
  • field effect transistors
  • high density
  • steady state
  • mathematical analysis
  • multiple access
  • multiple input
  • wide range
  • multi channel
  • markov chain
  • database
  • high speed
  • noisy channel
  • gate dielectrics