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All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory.
Xiaojie Wang
Zeyang Feng
Jingwei Cai
Hao Tong
Xiangshui Miao
Published in:
Sci. China Inf. Sci. (2023)
Keyphrases
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high density
field effect transistors
van der waals
low density
schottky barrier
close proximity
magnetic recording
data center
thin film
high power
memory requirements
high bandwidth
magnetic tape
real time
chip design
combining multiple
steady state
data mining
databases