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Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes.

Akio TakatsukaKohei SasakiDaiki WakimotoQuang Tu ThieuYuki KoishikawaJun ArimaJun HirabayashiDaisuke InokuchiYoshiaki FukumitsuAkito KuramataShigenobu Yamakoshi
Published in: DRC (2018)
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