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A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency.

K. ZaitsuA. MatsumotoM. NishidaY. TanakaH. YamashitaY. SatakeT. WatanabeK. ArakiN. NeiK. NakazawaJ. YamamotoM. UeharaH. KawashimaY. KobayashiT. HiranoK. Tatani
Published in: VLSI Technology and Circuits (2022)
Keyphrases
  • silicon dioxide
  • cmos image sensor
  • high speed
  • image sensor
  • low power consumption
  • dynamic range
  • processing capabilities
  • low power
  • pixel values