Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization.

M. Azzaz A. Benoist Elisa Vianello Daniele Garbin Eric Jalaguier Carlo Cagli C. Charpin Stefania Bernasconi Simon Jeannot T. Dewolf G. Audoit C. Guedj S. Denorme Philippe Candelier Claire Fenouillet-Béranger Luca Perniola

Published in: ESSDERC (2015)

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