First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.
Leming JiaoKaizhen HanZuopu ZhouZijie ZhengXiaolin WangQiwen KongYuye KangJishen ZhangLong LiuXiao GongPublished in: VLSI Technology and Circuits (2023)
Keyphrases
- light emitting
- silicon dioxide
- computer simulation
- semiconductor devices
- field effect transistors
- schottky barrier
- memory requirements
- memory usage
- mobile devices
- read write
- fuel cell
- computing power
- random access
- limited memory
- embedded systems
- steady state
- signal processing
- memory space
- semiconductor manufacturing
- computational power
- main memory
- low cost