1.25-GHz Quadrature Signal Corrector With 1.1-ps Error for Mobile DRAM Interface in 65-nm CMOS.
Yongjo KimKeunsoo SongDongkyun KimSeongHwan ChoPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2017)
Keyphrases
- cmos technology
- high speed
- low voltage
- amplitude modulation
- power consumption
- dynamic random access memory
- low power
- user interface
- silicon on insulator
- mobile devices
- signal processing
- high frequency
- frequency domain
- metal oxide semiconductor
- band limited
- mobile phone
- fourier transform
- impulse response
- low cost
- frequency band
- high density
- main memory
- radio frequency
- circuit design
- clock frequency
- nm technology
- parallel processing