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Fabrication of Sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process.

L. N. SunT. M. H. LeeZ. C. YangG. Z. Yan
Published in: NEMS (2010)
Keyphrases
  • silicon on insulator
  • cmos technology
  • high density
  • ibm power processor
  • integrated circuit
  • high speed
  • semiconductor devices
  • metal oxide semiconductor
  • real time
  • power consumption