A 1.22/6.7 ppm/°C VCO with frequency-drifting compensator in 60 nm CMOS.
Lan-Chou ChoHsiang-Hui ChangAugusto MarquesAlbert YangChinq-Shiun ChiuGuang-Kaai DehngPublished in: A-SSCC (2011)
Keyphrases
- cmos technology
- silicon on insulator
- power consumption
- nm technology
- optimal location
- high speed
- power supply
- real time
- controller design
- sliding mode control
- metal oxide semiconductor
- low frequency
- low power
- compression algorithm
- low voltage
- concept drift
- control scheme
- delay insensitive
- signal to noise ratio
- data streams