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An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications.
Robert Giterman
Alexander Fish
Narkis Geuli
Elad Mentovich
Andreas Burg
Adam Teman
Published in:
ESSCIRC (2017)
Keyphrases
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cmos technology
high speed
low cost
multi dimensional
low voltage