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Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier.

Sangheon LeeJeonghwan SongChanghyuk SeongJiyong WooJong-Moon ChoiSoon-Chan KwonHo-Joon KimHyun-Suk KangSoo Gil KimHoe Gwon JungKee-Won KwonHyunsang Hwang
Published in: VLSI Circuits (2016)
Keyphrases
  • high speed
  • data integration
  • analog vlsi
  • low cost
  • high density
  • databases
  • neural network
  • single chip
  • high bandwidth