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Realization of the First GaN Based Tunnel Field-Effect Transistor.
Alexander Chaney
Henryk Turski
Kazuki Nomoto
Qingxiao Wang
Zongyang Hu
Moon Kim
Huili Grace Xing
Debdeep Jena
Published in:
DRC (2018)
Keyphrases
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field effect transistors
mathematical analysis
high density
steady state
schottky barrier
simulation model
semiconductor devices
multiscale
structuring elements
databases
moving objects
virtual environment
mathematical model