A 6 GHz, 1.8 V, divide-by-2 circuit implemented in silicon bipolar technology.
C. PalaGerd SchuppenerMehran MokhtariPublished in: ISCAS (2) (1999)
Keyphrases
- high speed
- field effect transistors
- cmos technology
- high density
- silicon on insulator
- low power
- metal oxide semiconductor
- gallium arsenide
- computer systems
- steady state
- cost effective
- positive and negative
- semiconductor devices
- personal computer
- information systems
- markov chain
- analog circuits
- low voltage
- rapid development
- power consumption
- low cost