A HfO2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications.
Jing LiYulin ZhaoBo PengXuanzhi LiuQiao HuSheng DaiJianguo YangYuejun ZhangPublished in: ASICON (2021)
Keyphrases
- high reliability
- low power
- low cost
- power consumption
- leakage current
- data storage
- high speed
- management system
- cmos technology
- high precision
- low voltage
- file system
- single chip
- cloud computing
- main memory
- digital signal processing
- power supply
- power reduction
- digital camera
- real time
- vlsi architecture
- wireless transmission
- high power
- low power consumption
- vlsi circuits
- location information
- power saving
- electrical properties
- signal processor
- mixed signal
- logic circuits
- embedded systems