GaAs-based heterojunction bipolar transistors for very high performance electronic circuits.
Peter M. AsbeckMau-Chung Frank ChangKeh-Chung WangGerard J. SullivanDerek T. CheungPublished in: Proc. IEEE (1993)
Keyphrases
- electronic circuits
- field effect transistors
- high density
- steady state
- parallel processing
- mathematical analysis
- graduate school
- output voltage
- real time
- high reliability
- low power
- low cost
- high power
- artificial neural networks
- thin film
- thin film transistor
- gallium arsenide
- injection lasers
- circuit design
- integrated circuit
- positive and negative
- mathematical model
- information technology