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Design-oriented model for short-channel MOS transistors based on inversion charge.

Dayana A. Pino-MonroyPatrick ScheerMohamed Khalil BouchouchaCarlos Galup-MontoroManuel J. BarraganJean-Michel FournierAndreia CathelinSylvain Bourdel
Published in: LASCAS (2023)
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