ESD protection for thin gate oxides in 65 nm.
Guido NotermansTheo SmedesZeljko MrcaricaPeter C. de JongRalph StephanHans van ZwolDejan M. MaksimovicPublished in: Microelectron. Reliab. (2010)
Keyphrases
- field effect transistors
- cmos technology
- nm technology
- leakage current
- steady state
- low power
- information security
- power consumption
- protection scheme
- metal oxide semiconductor
- low cost
- parallel processing
- mathematical analysis
- real time
- data protection
- video sequences
- multiple input
- information systems
- nano scale
- machine learning
- data sets