Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology.
A. BoukhenoufaLionel PichonC. CordierPublished in: Microelectron. Reliab. (2007)
Keyphrases
- numerical simulations
- thin film
- solar cell
- high density
- theoretical analysis
- chance discovery
- short circuit
- multi layer
- three dimensional
- cost effective
- risk management
- noise reduction
- electron microscopy
- field effect transistors
- noise level
- low power
- room temperature
- decision support system
- data visualization
- integrated circuit
- gaussian noise
- data center