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Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices.

Liang HeHua ChenPeng SunXiaofei JiaChongguang DaiJing LiuLong ShaoZhaoqing Liu
Published in: Sci. China Inf. Sci. (2016)
Keyphrases
  • electron beam
  • semiconductor devices
  • metal oxide
  • high speed
  • x ray
  • database
  • real time
  • small size