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A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process-voltage-temperature variations.
C. B. Kushwah
Santosh Kumar Vishvakarma
Devesh Dwivedi
Published in:
Microelectron. J. (2016)
Keyphrases
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genetic algorithm
real time
process model
partial occlusion
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