Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance.
Pablo SanchisL. D. SanchezP. CasteraA. RosaA. M. GutiérrezAntoine BrimontG. Saint-GironsRégis OrobtchoukSébastien CueffPedro Rojo-RomeoR. BacheletP. RegrenyB. VilquinC. DubourdieuX. LetartreG. GrenetJ. PenuelasX. HuL. LouahadjJ.-P. LocquetL. ZimmermannChiara MarchioriS. AbelJean FompeyrineA. HakanssonPublished in: ICTON (2014)
Keyphrases
- cmos technology
- metal oxide semiconductor
- high speed
- low cost
- silicon on insulator
- electronic devices
- low power
- field effect transistors
- mobile devices
- st century
- consumer electronics
- case study
- high density
- semiconductor devices
- learning algorithm
- communication technologies
- low voltage
- power consumption
- desktop computers
- remote control
- high end
- physical characteristics
- solar cell
- computer systems