34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC.
Yiyang YuanYiming YangXinghua WangXiaoran LiCailian MaQirui ChenMeini TangXi WeiZhixian HouJialiang ZhuHao WuQirui RenGuozhong XingPui-In MakFeng ZhangPublished in: ISSCC (2024)