A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process.
Masafumi OnouchiKazuo OtsugaYasuto IgarashiToyohito IkeyaSadayuki MoritaKoichiro IshibashiKazumasa YanagisawaPublished in: A-SSCC (2011)