Transition-metal-oxide-based resistance-change memories.

Siegfried F. Karg Gerhard Ingmar Meijer J. Georg Bednorz Charles T. Rettner Alejandro G. Schrott Eric A. Joseph Chung Hon Lam Markus Janousch Urs Staub Fabio LaMattina Santos F. Alvarado Daniel Widmer Richard Stutz Ute Drechsler Daniele Caimi

Published in: IBM J. Res. Dev. (2008)

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