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An Ultra-Low-Voltage Bit-Interleaved Synthesizable 13T SRAM Circuit.

Jiacong SunHao GuoGeng LiHailong Jiao
Published in: IEEE J. Solid State Circuits (2022)
Keyphrases
  • low voltage
  • random access memory
  • cmos technology
  • high speed
  • design considerations
  • power line
  • low power
  • power management
  • low cost
  • parallel processing
  • leakage current
  • response time
  • power consumption