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eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology.

James A. O'DonnellChris ConnorTanmoy PramanikJeff HicksJuan G. AlzateFatih HamzaogluJustin BrockmanOleg GolonzkaKevin Fischer
Published in: IRPS (2019)
Keyphrases
  • rapid development
  • long term
  • key technologies
  • website
  • case study
  • cost effective
  • neural network
  • machine learning
  • artificial intelligence
  • data structure
  • control system
  • cognitive load
  • architectural models