High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memories.
Toru TanzawaYoshinori TakanoKentaro WatanabeShigeru AtsumiPublished in: IEEE J. Solid State Circuits (2002)
Keyphrases
- field effect transistors
- high density
- high voltage
- operating conditions
- low density
- partial discharge
- close proximity
- high power
- steady state
- data center
- pattern languages
- magnetic recording
- normal operation
- neural network
- thin film
- high bandwidth
- evolutionary computation
- low cost
- database
- fuzzy sets
- magnetic tape
- artificial intelligence
- decision making
- high speed