On-Chip Characterization of Random Telegraph Signal Noise in Bulk 90 nm CMOS.
J. KimT. Daniel LovelessJ. PewR. YoungD. ReisingM. NourP. ManosM. ChambersHugh J. BarnabyJ. NeuendankPublished in: IRPS (2024)
Keyphrases
- cmos technology
- nm technology
- analog vlsi
- silicon on insulator
- high speed
- metal oxide semiconductor
- low power
- random noise
- low cost
- signal detection
- power consumption
- low signal to noise ratio
- additive noise
- white noise
- wide band
- circuit design
- received signal
- random access memory
- low frequency
- cmos image sensor
- image sensor
- stochastic resonance
- low snr
- single chip
- noise level
- noisy environments
- high frequency
- signal processing
- wide dynamic range
- power dissipation
- mixed signal
- chip design
- low voltage
- charge coupled device
- noisy data
- original signal
- response function
- impulse response
- power spectrum
- noise variance
- noise reduction
- frequency domain
- direct sequence spread spectrum
- focal plane
- single channel
- signal to noise ratio
- parallel processing
- sampled data
- ibm power processor
- denoising methods
- integrated circuit
- noise model
- imaging systems
- high density
- median filter
- high signal to noise ratio