SRAM stability characterization using tunable ring oscillators in 45nm CMOS.
Jason TsaiSeng Oon TohZheng GuoLiang-Teck PangTsu-Jae King LiuBorivoje NikolicPublished in: ISSCC (2010)
Keyphrases
- cmos technology
- power consumption
- low power
- nm technology
- random access memory
- low voltage
- leakage current
- silicon on insulator
- low cost
- dynamic random access memory
- high speed
- power reduction
- stability analysis
- parallel processing
- power management
- image sensor
- metal oxide semiconductor
- vlsi circuits
- power dissipation
- analog vlsi
- communication systems
- digital signal processing
- power supply
- circuit design
- embedded dram