10.5 A 5.9pJ/b 10Gb/s serial link with unequalized MM-CDR in 14nm tri-gate CMOS.
Rajeev K. DokaniaAlexandra M. KernMike HeAdam C. FaustRichard TsengSkyler WeaverKai YuChristiaan BilTao LiangFrank O'MahonyPublished in: ISSCC (2015)
Keyphrases
- cmos technology
- nm technology
- low power
- metal oxide semiconductor
- high speed
- power consumption
- low voltage
- silicon on insulator
- low cost
- parallel processing
- image sensor
- integrated circuit
- rms error
- average error
- link structure
- real time
- root mean square
- gate dielectrics
- power dissipation
- circuit design
- registration errors
- cross section
- three dimensional