Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps.
P. AnandanA. NithyaN. MohankumarPublished in: Microelectron. Reliab. (2014)
Keyphrases
- silicon dioxide
- cmos technology
- noise level
- simulation model
- user interface
- low voltage
- noise sensitivity
- additive noise
- signal to noise ratio
- noisy data
- high speed
- high density
- image noise
- random noise
- input data
- low cost
- steady state
- median filter
- missing data
- simulation environment
- noisy environments
- field effect transistors
- real time