Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors.
P.-Y. ChenY.-L. ShaoK.-W. ChengK.-H. HsuJong-Shinn WuJ.-P. JuPublished in: Comput. Phys. Commun. (2007)
Keyphrases
- simulation study
- three dimensional
- field effect transistors
- schottky barrier
- carbon nanotubes
- monte carlo
- steady state
- high density
- semiconductor devices
- mathematical analysis
- x ray
- inverted pendulum
- depth map
- d objects
- carbon dioxide
- online auctions
- neural network
- evolutionary algorithm
- wireless sensor networks
- cloud computing
- low cost