Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications.
P. J. van der WelS. J. C. H. TheeuwenJ. A. BielenY. LiR. A. van den HeuvelJ. G. GommansF. van RijsP. BronH. J. F. PeuscherPublished in: Microelectron. Reliab. (2006)