Login / Signup
BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing.
H. W. Wan
Y. J. Hong
Y. T. Cheng
M. Hong
Published in:
IRPS (2019)
Keyphrases
</>
genetic algorithm
leakage current
simulated annealing
neural network
real world
reduction method
low voltage
nano scale
feature extraction
monte carlo
steady state
mathematical analysis
multiple input
database replication
metal oxide