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A-Si TFT Integrated Gate Driver Workable at -40°C Using Bootstrapped Carry Signal.
Jiwen Yang
Congwei Liao
Kun Wang
Junjun An
Shuai Shen
Shengdong Zhang
Published in:
IEEE Access (2022)
Keyphrases
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signal processing
thin film transistor
high frequency
image processing
multiresolution
non stationary
frequency domain
power consumption
measured data
multiple input
leakage current
metal oxide