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A-Si TFT Integrated Gate Driver Workable at -40°C Using Bootstrapped Carry Signal.

Jiwen YangCongwei LiaoKun WangJunjun AnShuai ShenShengdong Zhang
Published in: IEEE Access (2022)
Keyphrases
  • signal processing
  • thin film transistor
  • high frequency
  • image processing
  • multiresolution
  • non stationary
  • frequency domain
  • power consumption
  • measured data
  • multiple input
  • leakage current
  • metal oxide