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Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review.
Laixiang Qin
Chunlai Li
Yiqun Wei
Guoqing Hu
Jingbiao Chen
Yi Li
Caixia Du
Zhangwei Xu
Xiumei Wang
Jin He
Published in:
IEEE Access (2023)
Keyphrases
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recent developments
field effect transistors
steady state
high density
schottky barrier
mathematical analysis
high speed
semiconductor devices
positive and negative
recent advances
chip design
transmission line
learning algorithm
information retrieval
literature review
information systems
social networks