High-performance low-leakage regions of nano-scaled CMOS digital gates under variations of threshold voltage and mobility.
Hossein AghababaBehjat ForouzandehAli Afzali-KushaPublished in: J. Zhejiang Univ. Sci. C (2012)
Keyphrases
- power supply
- low voltage
- circuit design
- inversely proportional
- cmos image sensor
- low power consumption
- low cost
- high speed
- input image
- low power
- intensity variations
- charge coupled device
- metal oxide
- design considerations
- mobile users
- parallel processing
- power consumption
- power system
- human mobility
- seed selection
- metal oxide semiconductor
- analog to digital converter