Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node.
Weifeng LüXianlong ChenBo LiuZiqiang XieMengxue GuoMengjie ZhaoPublished in: Microelectron. J. (2022)
Keyphrases
- field effect transistors
- mathematical analysis
- positive and negative
- high speed
- image processing
- directed graph
- steady state
- high density
- image enhancement
- neural network
- threshold selection
- learning curve
- tree structure
- low cost
- real world
- high frequency
- graph structure
- denoising
- feedback loop
- databases
- unit length
- schottky barrier