Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V.
Yi-Chun LiuYu-Rui ChenYun-Wen ChenHsin-Cheng LinWan-Hsuan HsiehChien-Te TuBo-Wei HuangWei-Jen ChenChun-Yi ChengShee-Jier ChuehC. W. LiuPublished in: VLSI Technology and Circuits (2023)