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Different scalabilities of N- and P-type tunnel field-effect transistors with Si/SiGe heterojunctions.

Nguyen Dang ChienNguyen Thi ThuChun-Hsing ShihLuu The Vinh
Published in: ICICDT (2016)
Keyphrases
  • schottky barrier
  • field effect transistors
  • high speed
  • solar cell
  • databases
  • simulation model
  • semiconductor devices