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SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage.

Saibal MukhopadhyayRahul M. RaoJae-Joon KimChing-Te Chuang
Published in: IEEE Trans. Very Large Scale Integr. Syst. (2011)
Keyphrases
  • random access memory
  • low voltage
  • steady state
  • line segments
  • real time
  • significant improvement
  • key features
  • positive and negative
  • data sets
  • decision trees
  • low power