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The Effect of Gate Work Function on Wide Band-Gap Sn-doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors.
Han-Sol Ro
Sung Ho Kang
Sungyeop Jung
Published in:
ICEIC (2022)
Keyphrases
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field effect transistors
wide band
steady state
high density
mathematical analysis
schottky barrier
semiconductor devices
genetic algorithm
genetic algorithm ga
low light
slowly varying
image processing
markov chain
data center